| PART |
Description |
Maker |
| MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CLF1G0035S-100 CLF1G0035-100 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0035S-50 CLF1G0035-50 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| CGHV59070F-TB |
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
|
Cree, Inc
|
| TGA2576-FL-15 |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
